F1240 Datasheet | Polyfet RF Devices

Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER mon Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP 40WATTS OUTPUT ) MAX UNITS d B % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs g M Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current mon Source Input Capacitance mon Source Feedback Capacitance mon Source Output Capacitance 1 2.4 0.35 22.5 120 18 90 MIN 40 3 1 7 TYP MAX UNITS V m A u A V Mho Ohm Amp p F p F p F TEST CONDITIONS Ids = 0.15 A, Vds = 12.5 V, Vds = 0 V, Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 24 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet...