Polyfet RF Devices F1410
RF POWER VDMOS TRANSISTOR
| Part No. | F1410 |
|---|---|
| Datasheet | F1410 Download |
| Manufacturer |  Polyfet RF Devices |
| Description | RF POWER VDMOS TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1410 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISEABSOLUTE MAXIMUM RATINGS
(TC = 25 C) Total Device Dissipation 250 Watts Junction to Case Thermal Resistance 0.8 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V o -65 o C to 150o C 10 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 13 65 TYP 120WATTS OUTPUT ) MAX UNITS dB % 20:1...