F1427 - RF POWER VDMOS TRANSISTOR

Product Overview

Polyfet RF Devices

Part number	F1427
Manufacturer	Polyfet RF Devices
File Size	41.83 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1427 Datasheet
Additional preview pages of the F1427 datasheet.

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1427.

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Published: Mar 30, 2005 |