Datasheet Details
| Part number | F1430 |
|---|---|
| Manufacturer | Polyfet RF Devices |
| File Size | 38.03 KB |
| Description | RF POWER VDMOS TRANSISTOR |
| Datasheet |
 F1430 Datasheet
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General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Key Features
- gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1430.