F1535
F1535 is RF POWER VDMOS TRANSISTOR manufactured by Polyfet RF Devices.
Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 2.1 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o
-65 o C to 150o C
6.4 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER mon Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 13 55 TYP
35WATTS OUTPUT )
MAX UNITS d B % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs g M Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren mon Source Input Capacitanc mon Source Feedback Capacitanc mon Source Output Capacitanc 1 0.8 1 4.8 36 4 24 MIN 65 0.8 1 7 TYP MAX UNITS V m A u A V Mho Ohm Amp p F p F p F TEST CONDITIONS Ids = 0.04 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.08 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet....
