F2001
F2001 is PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR manufactured by Polyfet RF Devices.
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW...
