F3002 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F3002.

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F3002 rf power vdmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	F3002
Manufacturer	Polyfet RF Devices
File Size	36.22 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F3002 Datasheet

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F3002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.