L125 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Polyfet RF Devices

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Datasheet Details

Part number	L125
Manufacturer	Polyfet RF Devices
File Size	38.43 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	L125 Datasheet
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polyfet rf devices L125 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.

Published: Mar 22, 2005 |