• Part: L2801
  • Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
  • Manufacturer: Polyfet RF Devices
  • Size: 42.16 KB
Download L2801 Datasheet PDF
L2801 page 2
Page 2

Datasheet Summary

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE...