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LC401 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number LC401
Manufacturer Polyfet RF Devices
File Size 37.29 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet download datasheet LC401 Datasheet

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polyfet rf devices LC401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.