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LC821 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number LC821
Manufacturer Polyfet RF Devices
File Size 37.29 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet download datasheet LC821 Datasheet
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Full PDF Text Transcription

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polyfet rf devices LC821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
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