LK702 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Polyfet RF Devices

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Datasheet Details

Part number	LK702
Manufacturer	Polyfet RF Devices
File Size	36.05 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LK702 Datasheet
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Full PDF Text Transcription

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polyfet rf devices LK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance o 0.

Published: Mar 22, 2005 |