• Part: LK802
  • Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
  • Manufacturer: Polyfet RF Devices
  • Size: 35.90 KB
Download LK802 Datasheet PDF
LK802 page 2
Page 2

Datasheet Summary

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE...