LP722
LP722 is SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR manufactured by Polyfet RF Devices.
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE...
