LP821 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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LP821 silicon gate enhancement mode rf power ldmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	LP821
Manufacturer	Polyfet RF Devices
File Size	35.69 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LP821 Datasheet

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Other Datasheets by Polyfet RF Devices

Part Number	Description
LP821	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP801	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP801	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP802	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP802	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.