Polyfet RF Devices LQ801
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
| Part No. | LQ801 |
|---|---|
| Datasheet | LQ801 Download |
| Manufacturer |  Polyfet RF Devices |
| Description | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE oABSOLUTE MAXIMUM RATINGS
( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 4.5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 TYP 30.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS...