Note: Below is a high-fidelity text extraction (approx. 800 characters) for
LR401. For precise diagrams, and layout, please refer to the original PDF.
polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellula...
View more extracted text
ly for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.
LR401 Datasheet
