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polyfet rf devices
LX401
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR 60.0 Watts Single Ended
Package Style LX2 HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE ROHS COMPLIANT
Total Device Dissipation
120 Watts
Junction to Case Thermal
Resistance
o 1.
LX401 Datasheet
