Polyfet RF Devices LX723
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
| Part No. | LX723 |
|---|---|
| Datasheet | LX723 Download |
| Manufacturer |  Polyfet RF Devices |
| Description | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE oABSOLUTE MAXIMUM RATINGS
( T = 25 C ) Total Device Dissipation 220 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V 22.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP 45.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDIT...