• Part: LX723
  • Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
  • Manufacturer: Polyfet RF Devices
  • Size: 37.96 KB
Download LX723 Datasheet PDF
LX723 page 2
Page 2

Datasheet Summary

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE...