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LX803 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description

Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.

RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

  • low feedback and output capacitances HIGH.

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Datasheet Details

Part number LX803
Manufacturer Polyfet RF Devices
File Size 53.60 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet download datasheet LX803 Datasheet

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polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others. Package Style LX2 TM "Polyfet" process features low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.