LY402 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Polyfet RF Devices

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Datasheet Details

Part number	LY402
Manufacturer	Polyfet RF Devices
File Size	37.58 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LY402 Datasheet
Additional preview pages of the LY402 datasheet.

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polyfet rf devices LY402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 220.0 Watts Push - Pull Package Style AY HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance o 0.

Published: Mar 30, 2005 |