P124
Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Key Features
- low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency
- Part: P124
- Description: PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
- Category: Transistor
- Manufacturer: Polyfet RF Devices
- Size: 33.73 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| P1241-05 | Hamamatsu Corporation | CdS photoconductive cell |
| P1241-06 | Hamamatsu Corporation | CdS photoconductive cell |
| P1212AT | UNIKC | N-Channel MOSFET |
| P126FP10SNK | Shindengen | Power MOSFET |
| P1260AT | UNIKC | N-Channel MOSFET |
| P1203BD | UNIKC | MOSFET |
| P1203EK | UNIKC | MOSFET |
| P1210BK | UNIKC | MOSFET |
| P1260ETF | NIKO-SEM | N-Channel MOSFET |
| P1210BVA | UNIKC | N-Channel MOSFET |