Patented Gold Metallized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor
| Part number | P124 |
|---|---|
| Manufacturer | Polyfet RF Devices |
| File Size | 33.73 KB |
| Description | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Datasheet | P124_PolyfetRFDevices.pdf |
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Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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P124 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | International Rectifier |
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P1241-04 | CdS photoconductive cell | Hamamatsu Corporation |
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P1241-05 | CdS photoconductive cell | Hamamatsu Corporation |
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P1241-06 | CdS photoconductive cell | Hamamatsu Corporation |
See all Polyfet RF Devices datasheets
| Part Number | Description |
|---|---|
| P121 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| P122 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| P123 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
