| Part number | P281 |
|---|---|
| Datasheet | P281_PolyfetRFDevices.pdf |
| File Size | 38.41 KB |
| Manufacturer | Polyfet RF Devices |
| Description | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P2811A | Low Power EMI Reduction IC | ON Semiconductor |
|
P2811B | Low Power EMI Reduction IC | ON Semiconductor |
|
P2812A | Low Power EMI Reduction IC | ON Semiconductor |
|
P2812B | Low Power EMI Reduction IC | ON Semiconductor |
|
P2814A | Low Power EMI Reduction IC | ON Semiconductor |
See all Polyfet RF Devices datasheets
| Part Number | Description |
|---|---|
| P282 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
