SA701 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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SA701 silicon gate enhancement mode rf power vdmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	SA701
Manufacturer	Polyfet RF Devices
File Size	37.11 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet	SA701 Datasheet

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Other Datasheets by Polyfet RF Devices

Part Number	Description
SA702	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SA741	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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polyfet rf devices SA701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.