SC701 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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SC701 silicon gate enhancement mode rf power vdmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	SC701
Manufacturer	Polyfet RF Devices
File Size	37.12 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet	SC701 Datasheet

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Other Datasheets by Polyfet RF Devices

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polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.