SC721 Datasheet | Polyfet RF Devices

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V 6.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER mon Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 8 60 TYP 15.0 WATTS OUTPUT ) MAX UNITS d B % 20:1 TEST CONDITIONS Idq = 0.20 A, Vds = 12.5 V, F = Idq = 0.20 A, Vds = 12.5 V, F = 400 MHz 400 MHz η VSWR Relative Idq = 0.20 A, Vds = 12.5 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs g M Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current mon Source Input Capacitance mon Source Feedback Capacitance mon Source Output Capacitance 1 1.3 0.60 9.50 45.0 3.5 55.0 MIN 40 1.0 1 7 TYP MAX UNITS V m A u A V Mho Ohm Amp p F p F p F TEST CONDITIONS Ids = 20.00 m A, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 3.50 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210...