Datasheet4U Logo Datasheet4U.com

SE701 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

📥 Download Datasheet

Datasheet preview – SE701

Datasheet Details

Part number SE701
Manufacturer Polyfet RF Devices
File Size 36.64 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet download datasheet SE701 Datasheet
Additional preview pages of the SE701 datasheet.

📁 Similar Datasheet

  • SE7210TP1-E - Server Board Technical Product Specification (Intel Corporation)
  • SE7221BA1-E - Tested Hardware and Operating System List (Intel Corporation)
  • SE7230CA1-E - Entry Server Board (Intel Corporation)
  • SE7805-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE7806-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE7808-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE7809-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE7812-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE7815-B - 3-Terminal Positive Voltage Regulator (SeCoS)
  • SE78L05 - 5V POSITIVE VOLTAGE REGULATOR (ETC)
Other Datasheets by Polyfet RF Devices

    Full PDF Text Transcription

    Click to expand full text
    polyfet rf devices SE701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AE HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.
    Published: |