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SQ701 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number SQ701
Manufacturer Polyfet RF Devices
File Size 35.76 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet download datasheet SQ701 Datasheet
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Other Datasheets by Polyfet RF Devices
  • SQ721 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
  • SQ741 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
  • SQ742 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Full PDF Text Transcription

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polyfet rf devices SQ701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.
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