SR341 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Polyfet RF Devices

📥 Download Datasheet

Datasheet Details

Part number	SR341
Manufacturer	Polyfet RF Devices
File Size	36.69 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet	SR341 Datasheet
Additional preview pages of the SR341 datasheet.

📁 Similar Datasheet

SR3417 - LED Lamp (AUK)
SR3417-U - High Brightness LED Lamp (AUK)
SR3417-V - High Brightness LED Lamp (AUK)
SR34 - 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE (WON-TOP)
SR34 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (SEMTECH)
SR34 - Surface Mount Schottky Barrier rectifiers (MOSPEC)
SR34 - MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (PAN JIT)
SR34 - 3A Leaded Type Schottky Barrier Rectifiers (CITC)
SR340 - SCHOTTKY BARRIER RECTIFIER (JINAN JINGHENG)
SR340 - SCHOTTKY BARRIER RECTIFIER (Kingtronics)

Other Datasheets by Polyfet RF Devices

Full PDF Text Transcription

Click to expand full text

polyfet rf devices SR341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 500 Watts Junction to Case Thermal Resistance o 0.

Published: May 9, 2005 |