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POIN T NINE
Te c h n o l o g i e s , Inc.
D4016 TetraFET
65W - 28V - 1GHz
GOLD METALIZED SILICON DMOS RF FET
FEATURES
• METAL GATE • • • • • EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN (TCASE = 25°C unless otherwise stated) PD BVDSS VGSS ID Tstg Tj RØj-c Power Dissipation Drain-source breakdown voltage Gate-source voltage Drain Current Storage temperature Maximum operating junction temperature Thermal resistance junction-case 207W 60V ±20V 16A -65 to 150°C 200°C Max. .
D4016 Datasheet
