PDB3010HX4H
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 30V,35A, RDS(ON) =10.2mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- Full Bridge Applications
