PDC0956Z - N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

100V,10A , RDS(ON)=115mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDC0956Z n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC0956Z
Manufacturer	Potens semiconductor
File Size	468.19 KB
Description	N-Channel MOSFET
Datasheet	PDC0956Z Datasheet

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.