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PDC2209V - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available PPAK3x3 Dual Pin Configuration D1 D1D1D2D2 S1G1S2G2 G1 G2 S1.

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Datasheet Details

Part number PDC2209V
Manufacturer Potens semiconductor
File Size 407.99 KB
Description P-Channel MOSFET
Datasheet download datasheet PDC2209V Datasheet

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Full PDF Text Transcription

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20V P-Channel Dual MOSFETs PDC2209V General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS -20V RDSON 33m ID -7.5A Features  -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.
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