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PDC3902X Datasheet PDF

Potens semiconductor PDC3902X

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. PDC3902X
Datasheet PDC3902X Download
Manufacturer
Potens semiconductor
Description N-Channel MOSFET
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PDC3902X datasheet page 1 preview

GENERAL DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5x6 Pin Configuration DDDD SSSG G D S BVDSS 30V RDSON 1.6m ID 130A

FEATURES

● 30V, 130A, RDS(ON) =1.6mΩ@VGS = 10V
● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available

APPLICATIONS

● MB / VGA / Server Vcore
● POL

APPLICATIONS

● SMPS 2nd SR
● BMS System

ABSOLUTE MAXIMUM RATINGS

Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current
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