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PDC3964CZ - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,72A, RDS(ON) =3.7mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC3964CZ
Manufacturer Potens semiconductor
File Size 810.52 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet PDC3964CZ Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC3964CZ General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG G S BVDSS RDSON ID 30V 3.7m 72A Features  30V,72A, RDS(ON) =3.
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