PDC39F2BX Overview
These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology. This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the t avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PDC39F2BX Key Features
- 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available