PDC39F2BX
Description
These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology.
Key Features
- 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- Load Switch
