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PDC39F2BX - 30V N-Channel MOSFET

Description

transistors are using trench DMOS technology.

Features

  • 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC39F2BX
Manufacturer Potens semiconductor
File Size 958.76 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet PDC39F2BX Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC39F2BX General Description These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology. This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the t avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. ee PPAK5X6 Pin Configuration h D s D D D D D D DD ata S S S G G GS S S S Features  30V,120A, RDS(ON) =2.
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