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PDC39F2BX Datasheet 30V N-Channel MOSFET

Manufacturer: Potens semiconductor

Datasheet Details

Part number PDC39F2BX
Manufacturer Potens semiconductor
File Size 958.76 KB
Description 30V N-Channel MOSFET
Download PDC39F2BX Download (PDF)

General Description

These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology.

This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the t avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

30V N-Channel MOSFETs PDC39F2BX General.

Key Features

  • 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.