PDC4801R Datasheet | Potens semiconductor

40V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Q1 Q2 PPAK5x6 Asymmetric Dual Pin Configuration S2 S2 S2 G2 S1/D2 D1 D1 D1 G1 S2 S2 S2 G2 S1/D2 G1 D1 D1 D1 G1 D1 G2 S1 BVDSS 40V 40V RDSON 13m 6.8m ID 39A 60A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available D2 Applications - MB / VGA / Vcore - POL Buck Applications - SMPS 2nd...