PDC6902X - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

60V,100A, RDS(ON) =4.6mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

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PDC6902X n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC6902X
Manufacturer	Potens semiconductor
File Size	353.91 KB
Description	N-Channel MOSFETs
Datasheet	PDC6902X Datasheet

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60V N-Channel MOSFETs PDC6902X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 60V RDSON 4.6m ID 100A Features  60V,100A, RDS(ON) =4.