PDD02N65 Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO252 D S G PDD02N65 BVDSS 650V RDSON...
PDD02N65 Key Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available