PDD0903
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D
BVDSS -100V
RDSON 95m
ID -18A
Features
- -100V,-18A, RDS(ON) 95mΩ@VGS = -10V
- VGS Guarantee ± 25V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- Networking
- Load Switch
- LED applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Symbol VDS VGS ID
IDM PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed1 Power Dissipation (TC=25℃) Power Dissipation
- Derate above 25℃ Storage Temperature Range Operating...
