PDD0910
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration
BVDSS 100V
RDSON 200m
ID 8A
Features
- 100V,8A, RDS(ON) =200mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
App- lic Garetieonn Dsevice Available
- Networking
- Load Switch
- LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed1 Power Dissipation (TC=25℃)...
