Potens semiconductor PDD0956
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDD0956 |
|---|---|
| Datasheet | PDD0956 Download |
| Manufacturer |  Potens semiconductor |
| Description | N-Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO252 Pin Configuration D S G G D S BVDSS 100V RDSON 115m ID 12AFEATURES
● 100V,12A , RDS(ON)=115mΩ@VGS=10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Networking● Load Switch
● LED applications
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche En
