PDD16N25 Overview
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 250V RDSON 200m.
PDD16N25 Key Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available