PDD3710 - N+P Dual Channel MOSFETs

Potens semiconductor

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

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PDD3710 n+p dual channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDD3710
Manufacturer	Potens semiconductor
File Size	912.93 KB
Description	N+P Dual Channel MOSFETs
Datasheet	PDD3710 Datasheet

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30V N+P Dual Channel MOSFETs PDD3710 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252-4L Pin Configuration D1/D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 30V -30V RDSON 12m 30m ID 16A -12A Features  Fast switching  Green Device Available  Suit for 4.