Potens semiconductor PDD3906
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDD3906 |
|---|---|
| Datasheet | PDD3906 Download |
| Manufacturer |  Potens semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO252 Pin Configuration D S G BVDSS 30V RDSON 6mΩ ID 80AFEATURES
● 30V,80A, RDS(ON) =6mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● SMPS 2nd SRABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Si
