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PDD4701 - N+P Dual Channel MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 4.5V Gate Drive.

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Datasheet Details

Part number PDD4701
Manufacturer Potens semiconductor
File Size 605.26 KB
Description N+P Dual Channel MOSFETs
Datasheet download datasheet PDD4701 Datasheet

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Full PDF Text Transcription

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40V N+P Dual Channel MOSFETs PDD4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252-4L Pin Configuration D1 D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 40V -40V RDSON 32m 40m ID 15A -12A Features  Fast switching  Green Device Available  Suit for 4.
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