Datasheet Details
| Part number | PDD4701 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 605.26 KB |
| Description | N+P Dual Channel MOSFETs |
| Datasheet |
 PDD4701 Datasheet
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| Part number | PDD4701 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 605.26 KB |
| Description | N+P Dual Channel MOSFETs |
| Datasheet |
PDD4701 Datasheet
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These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
40V N+P Dual Channel MOSFETs PDD4701 General.
| Part Number | Description |
|---|---|
| PDD4903 | P-Channel MOSFET |
| PDD4904 | N-Channel MOSFETs |
| PDD4906 | N-Channel MOSFET |
| PDD4909 | P-Channel MOSFET |
| PDD4912-1 | N-Channel MOSFET |
| PDD4943 | P-Channel MOSFET |
| PDD4943-1 | P-Channel MOSFET |
| PDD4960 | N-Channel MOSFETs |
| PDD4963 | P-Channel MOSFET |
| PDD4964 | N-Channel MOSFET |