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PDD4903 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -40V,-45A, RDS(ON) =15mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDD4903
Manufacturer Potens semiconductor
File Size 776.45 KB
Description P-Channel MOSFET
Datasheet download datasheet PDD4903 Datasheet
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40V P-Channel MOSFETs PDD4903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS -40V RDSON 15m ID -45A Features  -40V,-45A, RDS(ON) =15mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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