PDD4904 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

40V, 80A, RDS(ON)=5.5mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDD4904
Manufacturer	Potens semiconductor
File Size	455.75 KB
Description	N-Channel MOSFETs
Datasheet	PDD4904 Datasheet
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40V N-Channel MOSFETs PDD4904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D SG G D S BVDSS 40V RDSON 5.5m ID 80A Features  40V, 80A, RDS(ON)=5.

Published: Aug 21, 2018 |