PDD4912-1 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

40V,23A, RDS(ON) =30mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
100% PB free and Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDD4912-1
Manufacturer	Potens semiconductor
File Size	714.63 KB
Description	N-Channel MOSFET
Datasheet	PDD4912-1 Datasheet
Additional preview pages of the PDD4912-1 datasheet.

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDD4912-1 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 21, 2018 |