PDD4912-1
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 40V,23A, RDS(ON) =30mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- 100% PB free and Green Device Available
Applications
- Load Switch
