PDD4960 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

40V, 90A, RDS(ON) =3.8mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDD4960
Manufacturer	Potens semiconductor
File Size	674.81 KB
Description	N-Channel MOSFETs
Datasheet	PDD4960 Datasheet
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40V N-Channel MOSFETs PDD4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 40V RDSON 3.8m ID 90A Features  40V, 90A, RDS(ON) =3.

Published: Aug 21, 2018 |